transistor(pnp) features z large collector power dissipation p c z complementary to 2sd874a maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic=-2ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe(1) v ce =-10v,i c =-500ma 85 340 dc current gain h fe(2) v ce =-5v,i c =-1a 50 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.2 -0.4 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -0.85 -1.2 v transition frequency f t v ce =-10v,i c =-50ma,f=200mhz 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 30 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 making bq br bs sot-89 1. base 2. collector 3. emitter 1 2 3 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sb7 66a
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu 2sb7 66a
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